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Rev 3: June 2004
AO4408, AO4408L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 12A RDS(ON) < 13m (VGS = 10V) RDS(ON) < 16m (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current
B
Maximum 30 12 12 10 80 30 100 3 2.1 -55 to 150
Units V V A A mJ W C
VGS TA=25C TA=70C ID IDM IAV
B,E
Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
EAV PD TJ, TSTG
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 23 48 12
Max 40 65 16
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=10A 30 Diode Forward Voltage IS=10A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 40 10.5 16 13 48 0.76 1 4.5 1020 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 320 80 0.25 10.3 VGS=4.5V, VDS=15V, ID=12A 2.1 3.9 3.9 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=12A, dI/dt=100A/s 3 19.2 2.6 26 18 5.5 6 30 5 32 32 0.5 12.5 1200 14 21 16.5 1.5 Min 30 0.003 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
100
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 10V 40 30 ID(A) 20 10 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 5 25C 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 4.5V 3.5V 25 3V 20 15 125C 10 VDS=5V 30
ID (A)
16 Normalized On-Resistance
1.8 ID=10A 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V
14 RDS(ON) (m)
VGS=4.5V
12
10
VGS=10V
8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
40 ID=10A 30
1.0E+01 VGS=0V 1.0E+00 125C
100 1.0E-01
RDS(ON) (m) 125C 20 IS (A) 1.0E-02 25C 1.0E-03 10 25C 1.0E-04 1.0E-05 0 2 4 6 8 10 0.0 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 1.0
0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 Capacitance (pF) VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=12A 1250 1000 750 500 250 Coss Ciss
Crss
100.0 RDS(ON) limited 10.0 ID (Amps) 10s 1ms 10ms 0.1s 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 100s Power (W) 50 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
100
1
0.1 Single Pulse 0.01 0.00001
PD Ton
T 100 1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 ID(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.00001 TA=25C Power Dissipation (W) 3 4
tA =
L ID BV - VDD
2
10s
1
SteadyState
0 0.0001 Time in avalanche, tA (s) Figure 12: Avalanche capability 0.001 25 75 100 125 TCASE (C) Figure 13: Power De-rating (Note A) 50 150
Alpha & Omega Semiconductor, Ltd.

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